HTC 10 during its launch for the Indian Market on May 26, 2016 in New Delhi, India. HTC 10 Smartphone has been launched in India, at a price of Rs. 52,990. (Photo : Saumya Khandelwal/Hindustan Times via Getty Images)
HTC is said to have big plans for its next flagship phone. The HTC 11 is rumored to be powered by the recently announced Qualcomm Snapdragon 835, 8 GB of RAM and a dual-camera setup. It is also speculated to have an edge-to-edge display screen.
According to Phone Arena, a posting from the Chinese social media site Weibo suggests that the upcoming device will sport a 5.5-inch screen size with a stunning 1440 x 2560 display resolution. It is also expected to sport a 3700 mAh battery.
Moreover, its alleged dual-camera setup will reportedly boast two 12 MP sensors for the main shooter, while the front-facing cam could be an 8 MP shooter. The main camera is not really a big upgrade compared to its predecessor. However, the device manufacturer could introduce a newer imaging technology that could debut with the phone to set it apart from the crowd.
Back in October, the HTC 11 was already rumored to be in the works and is said to be internally designated as HTC Ocean. It was also previously leaked by an alleged company designer that the next flagship device will have a Sense Touch feature that will allow its user to access several phone functions by a simple tap or swipe on the edge of the device.
The Taiwanese consumer electronics company could take the upcoming Mobile World Congress event as its stage to announce its high-end HTC 11. The event is scheduled to kick-off on Feb. 27 in Barcelona, Spain. Price-wise, the rumored premium device could be between $600 and $700.
It was only a month ago when Qualcomm and Samsung announced their partnership to create the Snapdragon 835. The upcoming chip will be using the latest 10 nm FinFET manufacturing processor, which will make these chips more powerful and energy-efficient. It will also be smaller compared to the current 14 nm FinFET-based chips, according to the official announcement by the two companies.
"Samsung's new 10nm FinFET process, for instance, allows up to a 30 percent increase in area efficiency with a 27 percent improvement in performance or up to 40 percent less power consumption compared to the previous version. These process improvements, combined with a more advanced chip design, can create significant battery life enhancements," the statement said.
Additional information coming from leaks is expected to surface concerning the HTC 11 by next year, but for now, everybody should enjoy the holidays.
